Quick look at: PEO-604
MULTIPURPOSE FAST RAMPING FURNACE
Since 1982 ATV is manufacturing the multipurpose fast ramping furnaces PEOs series with single quartz tube. It was initially developed for thick film paste firing. Since that a large variety of new and different processes and applications was and is still being added. ATV applies its PEO (PEO-603 and PEO-604- now replaced by PEO-603/4) series successfully also in semiconductor market segment.
The PEO series (PEO-603 is replaced by PEO-604) is ideal tool for R&D purposes and pilot line production tool. It can be applied easily for new unique and sophisticated process development as well low to medium volume production applications. This multipurpose furnace has several key aspects integrated and can handle wafers up to 200mm.
Next to floor space saving advantages the PEO (PEO-603 and PEO-604- now replaced by PEO-603/4) also has Zero energy usage in ambient stand-by. Another unique aspect of the system is the multi process capability when using our easy exchangeable Liners.
To reach the optimal temperature uniformity ATV uses 14 Kanthal heating elements which are positioned around, at the front and on back side the process tube and are PID controlled.
Technical information and figures
Technical Data PEO-604
1.780 x 834 x 2.345 mm (LxWxH)
475 kg (minimum configuration)
Inner Quartz tube:
230 mm (9”)
Standard Product Temperature:
25 wafers/50 wafers half pitch
3 Phases, 230 VAC, 32 A, 21 kW, 50 Hz, TN-C-S System, others on request
Floor space saving by small foot print
Energy saving by zero energy consumption at ambient standby
Max 100 wafer/process run
Up to 200mm dia wafers (150mm for LPCVD processes)
Multiple processes by easily exchangeable quartz In Liners
Easily exchangeable quartz In Liners
Up to 1.000°C within 25 minutes (empty chamber)
Down to < 100°C in less than 60 minutes
1K per 100 minutes (slowest ramping speed up/down)
Max.1.000°C continuous processing
Max.1.100°C with high temperature option
Temperature range 250°C to 1000°C (1100°C with high tempearture option)
Temperature range 250°C to 1.100°C
Low temperature processing with gas preheating
Ultimate vacuum < 5 x 10-6 mbar
He leak rate: < 5 x 10-9 mbar l/s
O2 = N2 supply quality
Common Applications PEO-604
CVD, PVD, LPCVD, MOCVD
Si3N4, Poly Si
Insitu doping with toxic gases
Carbon Nanotubes, Si Nanowires, Graphene
Gas/Solid Source Diffusion
Oxidation for VCSEL
Post Implant Annealing
LTCC Sintering, Thick film paste firing
Easily exchangeable In Liners for multiple LPCVD/diffusion/ alloying/annealing processes in original process tube
H2 annealing with quartz glass process chamber surrounded by N2 atmosphere
5 heater zone turning for best possible 3 D temperature uniformity
Porous SiC ceramics for LTCC sintering
Customized quartz ware
Heavy duty door bell jar carrying 25 kg
DI water bubbler
DI water steamer
Polyimide vapor trap
LPCVD vacuum pumps
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