The devices are placed on a hard coated Al or SiC plate (147 x 217 mm or up to max. 450 x 450 mm) heated by low mass IR-lamps underneath it. Precise temperature control is ensured by the control thermocouple inside the plate. The controller stores max. 10 profiles with each 100 individual steps for the time based set points for temperature, gas flow, vacuum etc. Very short times above melting point and short process times are maintained by the fast ramp rates >200°C/minute up and 100°C/minute down with direct nitrogen cooling. Rapid ramping > 20°C/second is available by direct IR heating by placing a low mass wafer carrier over the lamps. Ramp up/down rates are free programmable and are precisely controlled. Max. temperature is limited to 450°C but can be higher. Windows based software is available for the RS 232.
Fully automatic wafer cassette to cassette handling, thermo compression wafer/wafer, wafer/die bonding, customer specific features are available too.