Semiconductor Process - Multi Purpose - Fast Ramping - Space Saving & Energy Efficient Bench Top Furnaces
• Temperatures up to 1250°C, +/- 0.2°C
• Fast ramp up: max. 100°C/minute (batch),
or 20°C per second (single wafer)
• Fast ramp down: Cools down from 1000°C
to < 100°C in < 60 minutes
• Quartz glass process chamber
• Up to 300 mm ø wafers or equivalent
substrate size
• Vacuum down to 5 x 10-6 mbar/Torr
• Oxygen < 1 ppm
• Multiple process gases
• Pure hydrogen atmosphere (optional)
• Versatile - multiple processes with one furnace
• 100 steps per program
• Space saving & energy efficient
• only ~ 2 m2 floor space
• during stand by: no energy/no gas/no exhaust consumption
• operating mode: loading at room temperature - ramp up to single or multiple set point temperatures/hold cycles - process - cool down to "room temperature"
