• Deposition of ultra thin films using ALD      Technique
  • Multi-purpose, easily configurable process      chamber
  • Continuous operation at up to 600 °C
  • Rapid ramping up to 1050°C
  • Easily replaceable process reactor for different      films
  • Small footprint

Application fields of Atomic Layer Deposition
  • Capacitor dielectrics
     - conventional and high-k materials
  • Gate dielectrics
  • Interconnect applications
     - metal barrier and seed layer
  • MEMS and MOEMS - coating of 3D and air-gap      structures, interference filters
  • Sensor technology

Advantages of Atomic Layer Deposition
  • Thickness control on atomic scale
  • 100% step coverage in very high aspect ratios
  • Lower deposition temperatures
  • Wide process windows